Full Quantum Simulation of Silicon-on-Insulator Single-Electron Devices

We present a method which extends the range of applicability of the domain decomposition approach to tunneling transport. Thereby we gain the ability to simulate e.g. structures with geometrically confined semiconductor quantum dots surrounded by very thin layers of dielectric or quantum dots that are defined through a combination of electrostatic forces and geometric confinement. Recently, experimental data of single electron devices on the 10 nm length-scale have become available, but due to the smallness of the devices detailed information on their geometry is hard to come by. Thus the simulations presented in this paper are intended as proof of principle rather than quantitative results for a real device. For predictive simulations more detailed knowledge of the experimental geometry is required.